Пятница, 24 марта 2017 года, 10:00, Москва, НИТУ МИСиС, ауд. Б-536.
В НИТУ «МИСиС» стартовала серия лекций — Open RQC colloquium.
Николай Алексеевич Гиппиус, доктор физико-математических наук, профессор, Центр фотоники и квантовых материалов Сколтеха (ЦФКМ)
Лекция 20: “Light-Mater Interaction in Semiconductor Nanostructures”.
Light-matter interaction depends strongly not only on the chemical composition of the materials but also on their geometrical structure on the scale less than the wavelength. E.g. the excitons in a semiconductor nanostructures can be strengthen due to increase of the attraction between electrons and holes in case the semiconductor nanostructure is embedded into the dielectric with smaller permittivity. Several examples are discussed: e.g. near surface quantum wells and nano-platelets.
The ‘indirect excitons’, formed by spatially separated electrons and holes has smaller binding energies but their potential relief and the lifetime can be well controlled by external applied voltage. The basic concepts of the smart traps for the indirect excitons are presented.
The strong spatial redistribution of the electromagnetic field is also responsible for the polarization, spectral and angular dependencies of the photoluminescence in modulated structures, such as planar microcavities with distributed Bragg mirrors, photonic crystal slabs and nano-wiskers. Linear and nonlinear optical problems in these systems are discussed.
The effects of polarization multistability and polarization hysteresis in the coherently driven polariton system in semiconductor microcavity have been predicted and theoretically analyzed. This multistability arises due to polarization-dependent polariton-polariton interactions and has been recently observed in polarization- and time-resolved optical experiments. The similar effects are also expected in other types of photonic structures.
The polarization state of the photoluminescence and lasing modes of resonant photonic structures can also be controlled by proper sculpturing of the surface of the light emitting devices.
Для прохода в Университет необходим паспорт.
E-mail: email@example.com Ксения.
Адрес: 119049, Москва, Ленинский пр-т, д. 4, корпус Б. ауд. Б-536 (5-й этаж).
Проезд: ст. метро «Октябрьская» кольцевая.